Highly reflective rear surface passivation design for ultra-thin Cu(In,Ga) Se-2 solar cells
نویسندگان
چکیده
Available online 30 October 2014
منابع مشابه
Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells
Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passiv...
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